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Published on: August 2, 2019
Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor,
Takayoshi Katase1, Yudai Takahashi2, Xinyi He2
1Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan. katase@mces.titech.ac.jp kamiya.t.aa@m.titech.ac.jp.
Abstract:
Material properties depend largely on the dimensionality of the crystal structures and the associated electronic structures. If the crystal-structure dimensionality can be switched reversibly in the same material, then a drastic property change may be controllable. Here, we propose a design route for a direct three-dimensional (3D) to 2D structural phase transition, demonstrating an example in (Pb1- Sn )Se alloy system, where Pb2+ and Sn2+ have similar ns2 pseudo-closed shell configurations, but the former stabilizes the 3D rock-salt-type structure while the latter a 2D layered structure. However, this system has no direct phase boundary between these crystal structures under thermal equilibrium. We succeeded in inducing the direct 3D-2D structural phase transition in (Pb1- Sn )Se alloy epitaxial films by using a nonequilibrium growth technique. Reversible giant electronic property change was attained at x ~ 0.5 originating in the abrupt band structure switch from gapless Dirac-like state to semiconducting state.
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