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Organoselenium Precursors for Atomic Layer Deposition.

Jaroslav Charvot1, Raul Zazpe2,3, Jan M Macak2,3

  • 1Institute of Organic Chemistry and Technology, Faculty of Chemical Technology, University of Pardubice, Studentská 573, Pardubice 53210, Czech Republic.

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Summary

New organoselenium compounds are promising precursors for atomic layer deposition (ALD). Cyclic silyl selenides offer a balanced reactivity and stability for efficient molybdenum selenide (MoSe2) nanostructure synthesis.

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Area of Science:

  • Materials Science
  • Inorganic Chemistry
  • Nanotechnology

Background:

  • Atomic layer deposition (ALD) requires reliable selenium (Se) precursors.
  • Traditional Se precursors like H2Se and diethyl(di)selenide have limitations.
  • Expanding the precursor portfolio is crucial for advancing ALD processes.

Purpose of the Study:

  • To review organoselenium compounds as potential Se precursors for ALD.
  • To discuss the properties and synthesis of novel Se precursors.
  • To identify the most promising Se precursor for MoSe2 nanostructure formation via ALD.

Main Methods:

  • Literature review of organoselenium compounds for ALD.
  • Analysis of structural aspects, property tuning, and fundamental properties.
  • Evaluation of synthesis methods, focusing on cost-effectiveness and precursor stability.

Main Results:

  • The portfolio of Se precursors has been extended to include bis(trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(N,N-dimethyldithiocarbamate)selenium.
  • Symmetric four- and six-membered cyclic silyl selenides exhibit a favorable balance of reactivity and stability.
  • These cyclic silyl selenides are synthesized cost-effectively from readily available chlorosilanes and demonstrate improved air/moisture resistance and handling.
  • They possess sufficient volatility and thermal stability for ALD, enabling complete gas-to-solid phase exchange with MoCl5 to produce MoSe2 nanostructures.

Conclusions:

  • Cyclic silyl selenides are highly promising Se precursors for ALD due to their balanced properties and facile synthesis.
  • These precursors facilitate the cost-effective production of MoSe2 nanostructures.
  • They represent a significant advancement over traditional Se precursors for ALD applications.