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Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials
Jijun He1, Ioannis Paradisanos2, Tianyi Liu1
1Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Nano Letters
|March 23, 2021
Summary
Researchers developed a new low-loss integrated platform using molybdenum ditelluride monolayers and silicon nitride microresonators. This advancement enables efficient hybrid photonic integrated circuits without complex wafer bonding.
Area of Science:
- Materials Science
- Photonics
- Optoelectronics
Background:
- Monolayer transition-metal dichalcogenides (TMDs) possess direct bandgaps, making them promising for optoelectronic applications.
- Developing integrated photonic circuits with these 2D materials is crucial for next-generation devices.
Purpose of the Study:
- To create a low-loss integrated platform for optoelectronic devices.
- To combine molybdenum ditelluride (MoTe2) monolayers with silicon nitride (SiN) photonic microresonators.
Main Methods:
- Integration of MoTe2 monolayers onto SiN photonic microresonators.
- Characterization of microresonator quality factors in the telecommunication O- to E-bands.
Main Results:
- Achieved high microresonator quality factors exceeding 3 × 10^6.
- Demonstrated a low-loss integrated platform for hybrid photonic circuits.
Conclusions:
- The developed platform facilitates low-loss hybrid photonic integrated circuits with layered semiconductors.
- This approach eliminates the need for heterogeneous wafer bonding, simplifying fabrication.
