Related Experiment Video
Updated: Nov 11, 2025

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
Published on: May 17, 2024
Weighted Mobility Ratio Engineering for High-Performance Bi-Te-Based Thermoelectric Materials via Suppression of
Minyoung Kim1, Sang-Il Kim2, Sung Wng Kim3,4
1Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea.
Abstract:
Thermoelectrics, which can generate electricity from a temperature difference, or vice versa, is a key technology for solid-state cooling and energy harvesting; however, its applications are constrained owing to low efficiency. Since the conversion efficiency of thermoelectric devices is directly obtained via a figure of merit of materials, zT, which is related to the electronic and thermal transport characteristics, the aim here is to elucidate physical parameters that should be considered to understand transport phenomena in semiconducting materials. It is found that the weighted mobility ratio of the majority and minority carrier bands is an important parameter that determines zT. For nanograined Bi-Sb-Te alloy, the unremarked role of this parameter on temperature-dependent electronic transport properties is demonstrated. This analysis shows that the control of the weighted mobility ratio is a promising way to enhance zT of narrow bandgap thermoelectric materials.
Related Concept Videos
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Types of Semiconductors
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

