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Updated: Nov 11, 2025

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Hot-phonon effects in photo-excited wide-bandgap semiconductors
O Herrfurth1, E Krüger1, S Blaurock2
1Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany.
Abstract:
Carrier and lattice relaxation after optical excitation is simulated for the prototypical wide-bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons, holes as well as longitudinal-optic (LO), transverse-optic (TO) and acoustic phonons are distinguished. Carrier-LO-phonon interaction constitutes the dominant energy-loss channel as expected for polar semiconductors and hot-phonon effects are observed for strong optical excitation. Our results support the findings of recent time-resolved optical spectroscopy experiments.
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