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Related Concept Videos

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Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
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P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Interface-engineered electron and hole tunneling.

Rui Guo1,2, Lingling Tao3, Ming Li3

  • 1Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore, Singapore.

Science Advances
|March 25, 2021
PubMed
Summary
This summary is machine-generated.

We control electron and hole tunneling in ferroelectric tunnel junctions by engineering interfaces. This discovery enables designed functionalities for electronic devices by tuning tunneling behavior.

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Area of Science:

  • Quantum mechanics
  • Condensed matter physics
  • Materials science

Background:

  • Electron tunneling is a quantum mechanical phenomenon where electrons pass through energy barriers.
  • In certain tunnel junctions, hole tunneling can dominate over electron tunneling.
  • Understanding and controlling tunneling is crucial for advanced electronic devices.

Purpose of the Study:

  • To demonstrate deterministic control of electron and hole tunneling.
  • To investigate interface effects in ferroelectric tunnel junctions.
  • To explore the role of tunneling electroresistance in controlling charge carriers.

Main Methods:

  • Fabrication of interface-engineered Pt/BaTiO3/La0.7Sr0.3MnO3 ferroelectric tunnel junctions.
  • Electrical measurements to analyze tunneling electroresistance.
  • Electron microscopy and spectroscopy for material characterization.
  • Theoretical modeling to understand tunneling mechanisms.

Main Results:

  • Demonstrated deterministic control over electron and hole tunneling regimes.
  • Showcased the influence of interface termination on tunneling behavior.
  • Established a correlation between tunneling electroresistance reversal and carrier type.

Conclusions:

  • Interface engineering provides precise control over tunneling phenomena in ferroelectric junctions.
  • The ability to switch between electron and hole tunneling opens avenues for novel electronic functionalities.
  • This work advances the design principles for next-generation electronic devices.