EHD-jet patterned MoS₂on a high-kdielectric for high mobility in thin film transistor applications

Solution synthesis of MoS₂precursor followed by direct printing could be an effective way to make printed electronic devices. A linear MoS₂pattern was obtained by an electrohydrodynamic (EHD)-jet printer with a sol-gel system without chemical vapor deposition. The morphology of the MoS₂after a transfer process was maintained without wrinkles or cracking, resulting in a smooth surface compared with that of spin-coated films. EHD-jet printed MoS₂was transferred onto high-kdielectric Al₂O₃and used as a semiconductor layer in thin film transistor (TFT) devices. The printed MoS₂TFT has relatively good electrical characteristics, such as a linear field effect mobility, current ratio, and low subthreshold swing of 47.64 ± 2.99 cm²V^-1s^-1, 7.39 ± 0.12 × 10⁶, and 0.7 ± 0.05 V decade^-1, respectively. This technique may have promise for future applications.