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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory.

Taro Sasaki1, Keiji Ueno2, Takashi Taniguchi

  • 1Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.

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|March 25, 2021
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Summary
This summary is machine-generated.

Understanding two-dimensional heterostructure operations is key for next-gen nonvolatile memory (NVM). This study clarifies tunneling mechanisms in MoTe2, WSe2, and MoS2 devices, revealing critical current-limiting paths for improved NVM design.

Keywords:
2D nonvolatile memoryfloating gate voltage trajectorymemory operationmolybdenum disulfidemolybdenum ditelluridetungsten diselenide

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Device Physics

Background:

  • Two-dimensional (2D) heterostructures are promising for next-generation nonvolatile memory (NVM) devices.
  • Despite performance improvements, a deep understanding of their operational mechanisms is lacking, hindering material and device design.
  • Elucidating these mechanisms is crucial for advancing 2D NVM technology.

Purpose of the Study:

  • To elucidate the detailed operation mechanisms of 2D heterostructure-based floating gate (FG) NVM devices.
  • To identify the factors controlling tunneling behavior between the 2D channel and the FG.
  • To provide insights for designing reliable and high-performance 2D NVMs.

Main Methods:

  • Utilized floating gate (FG) voltage measurements for detailed mechanism elucidation.
  • Performed systematic comparisons of MoTe2, WSe2, and MoS2 channel devices.
  • Conducted control experiments to investigate the role of device structure, specifically the access region.

Main Results:

  • Identified three key current-limiting paths controlling channel-FG tunneling: tunneling barrier, 2D/metal contact, and p-n junction.
  • Demonstrated that an access region in the device structure is essential to enable 2D channel/FG tunneling while preventing direct electrode/FG tunneling.
  • Revealed distinct tunneling behaviors across different 2D materials (MoTe2, WSe2, MoS2).

Conclusions:

  • The operational mechanisms of 2D-based FG NVM devices are significantly influenced by tunneling barriers, contact properties, and channel characteristics.
  • The inclusion of an access region is critical for achieving efficient and reliable tunneling in 2D channel/FG NVMs.
  • Ambipolar 2D-based FG-type NVM devices incorporating an access region show potential for high electrical reliability.