Related Experiment Video
Updated: Nov 11, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Directional charge delocalization dynamics in semiconducting 2H-MoS[Formula: see text] and metallic 1T-Li[Formula:
Robert Haverkamp1,2, Nomi L A N Sorgenfrei1, Erika Giangrisostomi1
1Methods and Instrumentation for Synchrotron Radiation Research PS-ISRR, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
Abstract:
The layered dichalcogenide MoS[Formula: see text] is relevant for electrochemical Li adsorption/intercalation, in the course of which the material undergoes a concomitant structural phase transition from semiconducting 2H-MoS[Formula: see text] to metallic 1T-Li[Formula: see text]MoS[Formula: see text]. With the core hole clock approach at the S L[Formula: see text] X-ray absorption edge we quantify the ultrafast directional charge transfer of excited S3p electrons in-plane ([Formula: see text]) and out-of-plane ([Formula: see text]) for 2H-MoS[Formula: see text] as [Formula: see text] fs and [Formula: see text] fs and for 1T-Li[Formula: see text]MoS[Formula: see text] as [Formula: see text] fs and [Formula: see text] fs. The isotropic charge delocalization of S3p electrons in the semiconducting 2H phase within the S-Mo-S sheets is assigned to the specific symmetry of the Mo-S bonding arrangement. Formation of 1T-Li[Formula: see text]MoS[Formula: see text] by lithiation accelerates the in-plane charge transfer by a factor of [Formula: see text] due to electron injection to the Mo-S covalent bonds and concomitant structural repositioning of S atoms within the S-Mo-S sheets. For excitation into out-of-plane orbitals, an accelerated charge transfer by a factor of [Formula: see text] upon lithiation occurs due to S-Li coupling.
More Related Videos
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
06:53Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
Related Concept Videos
Valence Bond Theory
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Trends in Lattice Energy: Ion Size and Charge