Hopping-Dominated Spin Transport in Unintentionally Doped Organic Semiconductors

We report a spin diffusion theory to predict unusual pure spin current transport in unintentionally doped organic semiconductors. We demonstrate that the feasibility of pure spin current transport via polaron hopping at a low carrier density. Our theoretical prediction, 40 nm, for spin diffusion length (SDL) in dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) is in very good agreement with experimental data. Interestingly, SDL can be prolonged by restraining molecular geometry structure disorder and reducing the reorganization energy. In comparison with anisotropic organic materials, the SDL in isotropic ones increases up to 60%. Our results open up a new avenue to design organic spintronics devices with long SDL and low carrier density.