Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration
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Updated: Nov 10, 2025

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
Published on: June 7, 2019
Zhihua Fan1, Qinling Deng2, Xiaoyu Ma1,3
1Chengdu Research Institute, Sichuan University of Arts and Science, No. 519 Tashi Road, Dazhou 635000, China.
Abstract:
In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave-matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.
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