Perovskite Light-Emitting Devices with Doped Hole Transporting Layer

Area of Science:

• Materials Science
• Semiconductor Devices
• Optoelectronics

Background:

• Perovskite quantum dots (PQDs) are crucial for semiconductor devices, particularly LEDs.
• Low conductivity ligands and defects in PQDs hinder charge injection and transport, limiting electroluminescent performance.
• Effective management of charge dynamics is essential for optimizing PQD-based devices.

Purpose of the Study:

• To investigate the impact of p-dopants on the hole transporting layer (HTL) of PQD LEDs.
• To enhance charge injection and transport properties in PQD devices.
• To improve the overall electroluminescent performance of PQD LEDs.

Main Methods:

• Three p-dopants (F4-TCNQ, F6-TCNNQ, TCNH14) were doped into the poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) HTL.
• Fabrication of PQD LEDs utilizing neat and doped PTAA HTLs.
• Electroluminescence measurements, capacitance analysis, and transient electroluminescence studies were performed.

Main Results:

• Devices with doped PTAA HTLs showed improved electroluminescent performance compared to neat PTAA devices.
• The device incorporating F4-TCNQ exhibited a 27% increase in peak external quantum efficiency.
• Capacitance and transient measurements provided insights into interactions within the doped HTL and at the HTL-PQD interface.

Conclusions:

• P-doping of the PTAA HTL is an effective strategy to enhance PQD LED performance.
• F4-TCNQ demonstrates significant potential for improving external quantum efficiency in PQD devices.
• Understanding interfacial interactions is key to further optimizing PQD-based optoelectronic devices.