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Modelling Electron Channeling Contrast Intensity of Stacking Fault and Twin Boundary Using Crystal Thickness Effect.

Hana Kriaa1,2, Antoine Guitton1,2, Nabila Maloufi1,2

  • 1Arts et Métiers-LEM3, Université de Lorraine-CNRS, 7 rue Félix Savart, 57070 Metz, France.

Materials (Basel, Switzerland)
|April 3, 2021
PubMed
Summary

Electron Channeling Contrast Imaging (ECCI) reveals crystalline defects by analyzing backscattered electron intensity. This study develops a theoretical model to understand ECCI contrast for twin boundaries and stacking faults.

Keywords:
ECCIcrystal thicknessdynamical theory of electron diffractionmodelling BSE intensityperfect and imperfect crystalplanar defectsstacking faulttwin boundary

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electron Microscopy

Background:

  • Backscattered electron intensity modulations in scanning electron microscopy create contrast for Kikuchi bands and crystalline defects.
  • Electron Channeling Contrast Imaging (ECCI) offers mesoscale defect characterization with high resolution, comparable to transmission electron microscopy.
  • Understanding ECCI contrast mechanisms for planar defects like twin boundaries and stacking faults is crucial for materials analysis.

Purpose of the Study:

  • To develop a theoretical approach for comprehending ECCI contrasts of twin boundaries and stacking faults.
  • To explicitly express calculated backscattered electron intensity as a function of experimental parameters.
  • To investigate the influence of specimen thickness on channeling contrast and Kikuchi band formation.

Main Methods:

  • Utilized dynamical diffraction theory to formulate an original theoretical model for ECCI.
  • Calculated backscattered electron intensity based on physical and practical parameters of the ECCI experiment.
  • Extended the theoretical model to analyze imperfect crystals containing planar defects (twin boundaries, stacking faults).

Main Results:

  • The theoretical model successfully studies the effect of specimen thickness on channeling contrast in perfect crystals.
  • The model clarifies the formation of Kikuchi bands under varying thickness conditions.
  • Intensity oscillations observed in ECCI micrographs of twin boundaries and stacking faults are explained by the extended theoretical approach.

Conclusions:

  • The developed theoretical model provides a deeper understanding of ECCI contrast mechanisms for crystalline defects.
  • The study elucidates the role of specimen thickness and planar defects in ECCI.
  • This work enhances the capability of ECCI for detailed characterization of microstructural features.