Large T g Shift in Hybrid Bragg Stacks through Interfacial Slowdown
Konrad Rolle1, Theresa Schilling2, Fabian Westermeier3
1Max-Planck-Institute of Polymer Research, Ackermannweg 10, Mainz 55128, Germany.
Macromolecules
|April 5, 2021
Summary
We demonstrate a novel nacre-mimetic Bragg stack for studying polymer glass transition (Tg) in confined thin films. This method reveals significant Tg increases and interfacial dynamics using X-ray photon correlation spectroscopy (XPCS).
Area of Science:
- Materials Science
- Polymer Physics
- Nanotechnology
Background:
- Confinement effects on polymer glass transition temperature (Tg) are crucial in thin films.
- Existing techniques for studying interfacial Tg often require highly specialized sample designs.
- Understanding polymer dynamics at interfaces is key to designing advanced materials.
Purpose of the Study:
- To develop a versatile platform for studying confined polymer thin films.
- To investigate glass transition and interfacial dynamics in a nacre-mimetic Bragg stack.
- To correlate structural periodicity with polymer behavior at interfaces.
Main Methods:
- Fabrication of nacre-mimetic clay/polymer Bragg stacks with controlled polymer layer thickness (monolayer and bilayer).
- Measurement of glass transition temperature (Tg) using standard thermal analysis.
- Application of X-ray photon correlation spectroscopy (XPCS) to probe interfacial dynamics.
Main Results:
- A significant increase in Tg (approximately 100 K) was observed for the polymer monolayer.
- XPCS revealed interfacial slowdown and platelet dynamics originating from the clay/polymer interface.
- Bilayers exhibited distinct Tg processes, confirming contributions from both bulk-like and interfacial regions.
Conclusions:
- The nacre-mimetic Bragg stack effectively allows for tunable confinement and enhanced signal for interface studies.
- XPCS is sensitive to clay/polymer interfacial dynamics, complementing Tg measurements.
- Engineered lattice spacing approaching interfacial layer dimensions enables significant Tg shifts and detailed interfacial studies.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
417
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
417
Steady, Laminar Flow Between Parallel Plates
540
Understanding steady, laminar flow between parallel plates is essential for analyzing and designing flow in narrow rectangular channels, commonly found in various water conveyance and drainage systems. The Navier-Stokes equations govern fluid motion and are generally challenging to solve due to their nonlinearity. However, simplifications are possible in certain cases, like the steady laminar flow between parallel plates. For this scenario, we assume steady, incompressible, laminar flow.
540
Thermal Sigmatropic Reactions: Overview
2.3K
Sigmatropic rearrangements are a class of pericyclic reactions in which a σ bond migrates from one part of a π system to another. These are intramolecular rearrangements where the total number of σ and π bonds remain unchanged.
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in 1,5-hexadiene, referred...
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in 1,5-hexadiene, referred...
2.3K
Biasing of FET
443
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
443
Lagging Strand Synthesis
15.1K
15.1K
Lagging Strand Synthesis
58.0K
During replication, the complementary strands in double-stranded DNA are synthesized at different rates. Replication first begins on the leading strand. Replication starts later, occurs more slowly, and proceeds discontinuously on the lagging strand.
There are several major differences between synthesis of the leading strand and synthesis of the lagging strand. 1) Leading strand synthesis happens in the direction of replication fork opening, whereas lagging strand synthesis happens in the...
There are several major differences between synthesis of the leading strand and synthesis of the lagging strand. 1) Leading strand synthesis happens in the direction of replication fork opening, whereas lagging strand synthesis happens in the...
58.0K


