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MOSFET Amplifiers01:17

MOSFET Amplifiers

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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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Small-Signal Analysis of MOSFET Amplifiers01:23

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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BJT Amplifiers01:14

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Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
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Small-Signal Analysis of BJT Amplifiers01:21

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Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.
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A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
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Updated: Nov 10, 2025

Fabrication and Characterization of Superconducting Resonators
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High-power solid-state amplifier for superconducting radio frequency cavity test facility.

Akhilesh Jain1, Deepak Kumar Sharma1, Alok Kumar Gupta1

  • 1Radio Frequency Systems Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India.

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Summary

A new 36 kW solid-state radio frequency amplifier was developed for testing superconducting radio frequency cavities. This amplifier features a modular design and achieves high efficiency and power gain.

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Area of Science:

  • Physics
  • Electrical Engineering
  • Accelerator Technology

Background:

  • Superconducting radio frequency (SRF) cavities are crucial for particle accelerators.
  • Testing SRF cavities requires high-power radio frequency (RF) systems to establish desired voltage gradients.
  • Existing RF power sources may have limitations in terms of efficiency, scalability, or modularity.

Purpose of the Study:

  • To design, construct, and rigorously test a high-power solid-state RF amplifier for SRF cavity testing.
  • To develop and validate in-house constituent components for the amplifier.
  • To characterize the performance of the amplifier and its subsystems.

Main Methods:

  • Development of a horizontal test facility for SRF cavity testing.
  • Design and fabrication of a 36 kW average power, 650 MHz solid-state RF amplifier.
  • In-house development of modular components including 500 W gain modules, radial dividers/combiners, power sensors, and directional couplers.
  • Rigorous testing and performance measurement of the amplifier and its components.

Main Results:

  • The solid-state RF amplifier achieved a maximum average output power of 36 kW at 650 MHz.
  • The amplifier exhibits a modular and scalable design with a power gain of 86 dB.
  • Key components demonstrated excellent performance: radial combiner efficiency of 98.4% and directional coupler insertion loss of 0.05 dB.
  • Measured wall plug efficiency for the 36 kW amplifier reached 43.6%.

Conclusions:

  • The developed high-power solid-state RF amplifier meets the requirements for SRF cavity testing.
  • The modular design and in-house developed components confirm the validity of the design methodology.
  • The amplifier's performance, including efficiency and component characteristics, is suitable for advanced accelerator applications.