Related Experiment Video
Updated: Jul 25, 2026

11:23
Lensless Fluorescent Microscopy on a Chip
Published on: August 17, 2011
17.9K
Non-diffracting beam generated from a photonic integrated circuit based axicon-like lens.
Optics Express
|April 6, 2021
Summary
We developed an on-chip silicon-on-insulator device using deep-ultraviolet lithography to create a non-diffracting beam. Apodizing gratings enhanced light penetration depth, enabling robust beam generation for optical applications.
Area of Science:
- Photonics and Optical Engineering
- Nanofabrication
- Integrated Optics
Background:
- Non-diffracting beams offer extended propagation distances, crucial for optical manipulation and sensing.
- Generating these beams on-chip requires advanced fabrication techniques for precise optical element design.
Purpose of the Study:
- To demonstrate an on-chip silicon-on-insulator (SOI) device for generating non-diffracting beams.
- To improve the penetration depth of diffractive axicon-like lenses using grating apodization.
Main Methods:
- Fabrication of a diffractive axicon-like lens using deep-ultraviolet lithography (200 nm feature size).
- Implementation of a seven-stage multimode interferometer with azimuthally apodized circular gratings.
- Characterization using a swept source laser (1300±50 nm) and balanced homodyne detection.
Main Results:
- Generation of a non-diffracting beam with an approximate length of 850 µm.
- Apodization technique increased grating penetration depth from ≈5 µm to ≈60 µm.
- Output lobe position showed minimal spectral dependence.
Conclusions:
- The developed SOI device successfully generates non-diffracting beams with enhanced penetration depth.
- Azimuthal apodization is an effective method for improving grating performance in integrated photonic devices.
- The device shows wavelength stability, suitable for various photonic applications.

