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Updated: Nov 10, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Research on Pt/NiO/WO3-:Ti/W Multijunction Memristors with Synaptic Learning and Memory Functions
Hengjie Zhang1,2, Chuantong Cheng1,2, Beiju Huang1,2,3
1The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.
Abstract:
Artificial synapses based on biological synapses represent a new idea in the field of artificial intelligence with future applications. Current two-terminal RRAM devices have developed tremendously due to the adjustable synaptic plasticity of artificial synapses. However, these devices still have some problems, such as current leakage and poor durability. Here, we demonstrate a Pt/NiO/WO3:Ti/W memristor with a pn-type heterojunction and two metal-semiconductor contacts, which exhibits good rectification. Due to the change in the internal potential barrier, the devices possess multiconductance states under different pulse modulations and memory characteristics, similar to synapses. The rectification characteristics of the device exhibit stable enhancement and suppression behavior. Each device in the 10 × 10 cross array we constructed can be written correctly, which verifies that leakage current does not appear in the device. The structure proposed in this work has great significance for the integration of large-scale memristor cross arrays.
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