Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

766
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
766
MOSFET01:16

MOSFET

753
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
753
Characteristics of MOSFET01:17

Characteristics of MOSFET

623
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
623
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

567
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
567
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.1K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.1K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

629
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
629

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Sequential Plasmid Curing and Genome Editing in <i>Escherichia coli</i> Nissle 1917.

ACS synthetic biology·2026
Same author

Conformational gating of single-molecule conductance in crown ether junctions by Li<sup>+</sup> coordination.

Chemical communications (Cambridge, England)·2026
Same author

Unraveling the dynamics of multiple excited states in a single-molecule transistor.

Nature communications·2026
Same author

Ion-Precise Electrosynthesis and Memristors of Sequence-Controlled Conjugated Polymers.

Angewandte Chemie (International ed. in English)·2026
Same author

Heteroatom Effects on Quantum Interference in Molecular Junctions: Exploring Perturbation through Multiple Cross-Conjugation.

The journal of physical chemistry. C, Nanomaterials and interfaces·2026
Same author

Unveiling the Dynamic Ionic Interactions at the Single-Molecule Resolution.

Journal of the American Chemical Society·2026

Related Experiment Video

Updated: Nov 9, 2025

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

1.0K

Single-Molecule Electrochemical Transistors.

Jie Bai1, Xiaohui Li1, Zhiyu Zhu1

  • 1State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.

Advanced Materials (Deerfield Beach, Fla.)
|April 7, 2021
PubMed
Summary
This summary is machine-generated.

Single-molecule electrochemical transistors offer advanced control over tunneling currents for molecular computing. This review explores their characteristics and fabrication for future integrated molecular electronic devices.

Keywords:
break junctionelectrochemical gateon/off ratiosingle-molecule transistorstransfer characteristics

More Related Videos

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

389
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.9K

Related Experiment Videos

Last Updated: Nov 9, 2025

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

1.0K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

389
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.9K

Area of Science:

  • Molecular electronics
  • Nanotechnology
  • Electrochemistry

Background:

  • Single-molecule electrochemical transistors (SMETs) are novel molecular devices.
  • They modulate tunneling current via an electrochemical gate.
  • SMETs are promising for molecular integrated circuits and future molecular computers.

Purpose of the Study:

  • To review the transfer characteristics and performance of typical SMETs.
  • To discuss the prospects for fabricating integrated SMET devices.

Main Methods:

  • Focus on analyzing the current modulation mechanisms in SMETs.
  • Examining the role of the interfacial electrical double layer.
  • Investigating direct orbital gating and electrochemical electron transfer.

Main Results:

  • SMETs utilize interfacial electrical double layers for current modulation.
  • Current modulation is achieved through orbital gating and electrode potential-driven electron transfer.
  • This enriches the functional capabilities of transistor devices.

Conclusions:

  • SMETs offer versatile functionalities for advanced molecular electronics.
  • Further research into fabrication is crucial for developing integrated molecular devices.
  • These transistors hold significant potential for the advancement of molecular computing.