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Updated: Nov 9, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Flexible and highly responsive photodetectors based on heterostructures of MoS2and all-carbon transistors
Li Li1,2, Yuanyuan Shang3, Suye Lv1,2
1CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
Abstract:
Heterostructures of graphene and transition-metal dichalcogenides (TMDCs) are promising candidates for high-performance flexible photodetectors because of their high photoresponsivity and detectivity. However, the mechanical stability of current flexible photodetectors is limited, due to a mechanical mismatch between their two-dimensional channel materials and metallic contacts. Herein, we develop a type of mechanically stable, highly responsive, and flexible photodetector by integrating MoS2and all-carbon transistors. By combining the high mobility of graphene with the strong light-matter interactions of MoS2, our heterostructure photodetector exhibits a greatly improved photoresponse performance, compared with individual graphene or MoS2photodetectors. In addition, the mechanical properties of the all-carbon electrodes are a good match for those of the active two-dimensional channels, resulting in greatly improved electrical stability of the heterostructure photodetector under mechanical deformation. These capabilities make our heterostructure photodetector a promising candidate for flexible photodetection and photoimaging applications.
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