Highly In-Plane Anisotropic Two-Dimensional Ternary Ta₂NiSe₅ for Polarization-Sensitive Photodetectors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional (2D) materials exhibit unique anisotropic electrical and optoelectrical properties.
• Low-symmetry 2D materials are crucial for developing polarization-integrated nanodevices.
• Ternary transition metal dichalcogenides offer potential for novel electronic and optoelectronic applications.

Purpose of the Study:

• To systematically investigate the anisotropic electron transport and optoelectrical characteristics of multilayer 2D ternary Ta2NiSe5.
• To evaluate the potential of Ta2NiSe5 for use in polarization-sensitive photodetectors and field-effect transistors.

Main Methods:

• Fabrication of multilayer 2D Ta2NiSe5 field-effect transistors.
• Characterization of electrical transport properties along different crystallographic directions.
• Measurement of polarization-dependent photocurrent in Ta2NiSe5-based photodetectors.

Main Results:

• A polarization-sensitive Ta2NiSe5 photodetector demonstrated a linear anisotropy ratio of approximately 3.24 under 1064 nm illumination.
• Field-effect transistors based on multilayer Ta2NiSe5 exhibited high field-effect mobility (161.25 cm2·V−1·s−1) along the a-axis (armchair direction).
• Excellent current saturation characteristics were observed in Ta2NiSe5 transistors at room temperature.

Conclusions:

• Multilayer Ta2NiSe5 possesses significant in-plane anisotropic optoelectrical properties.
• Ta2NiSe5 is a promising candidate for advanced polarization-sensitive optoelectronic devices and nanodevices.
• These findings contribute to a deeper understanding of anisotropic 2D materials for future technological applications.