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AB-stacked nanosheet-based hexagonal boron nitride.

Jae Kap Lee1, Jin Gyu Kim2, K P S S Hembram1

  • 1Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea.

Acta Crystallographica Section B, Structural Science, Crystal Engineering and Materials
|April 12, 2021
PubMed
Summary

Commercial hexagonal boron nitride (h-BN) typically displays an AB stacking sequence, not the previously assumed AA. This metastable phase arises from specific growth conditions and explains h-BN's unique properties.

Keywords:
AB stackinghexagonal boron nitridehigh-resolution transmission electron microscopysimulation

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Hexagonal boron nitride (h-BN) is widely studied for its unique electronic and thermal properties.
  • Existing interpretations suggest h-BN predominantly exhibits an AA stacking sequence.

Purpose of the Study:

  • To investigate the predominant stacking sequence in commercial hexagonal boron nitride (h-BN) platelets.
  • To elucidate the formation mechanism and structural characteristics of the AB stacking sequence in h-BN.

Main Methods:

  • Analysis of commercial h-BN platelets (10-500 nm thickness).
  • Simulation of thin AB films (2-20 layers).
  • X-ray diffraction pattern analysis.

Main Results:

  • Commercial h-BN platelets predominantly exhibit an AB stacking sequence of nanosheets.
  • The AB-stacked nanosheet is identified as a metastable phase of h-BN.
  • Simulations support the AB stacking model and explain observed X-ray diffraction patterns.

Conclusions:

  • The AB stacking sequence is a key structural feature of commercial h-BN.
  • A growth mechanism involving "substrate-induced 2D growth" is proposed, where substrate pressure drives h-BN formation.
  • This finding necessitates a re-evaluation of h-BN's properties and applications based on its predominant AB stacking.