Related Experiment Video
Updated: Nov 9, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
2D MXene-Molecular Hybrid Additive for High-Performance Ambipolar Polymer Field-Effect Transistors and Logic Gates
Hanlin Wang1, Ye Wang1, Zhenjie Ni2
1Institut de Science et d'Ingénierie Supramoléculaires, University of Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France.
Abstract:
MXenes are highly conductive layered materials that are attracting a great interest for high-performance opto-electronics, photonics, and energy applications.. Their non-covalent functionalization with ad hoc molecules enables the production of stable inks of 2D flakes to be processed in thin-films. Here, the formation of stable dispersions via the intercalation of Ti3 C2 Tx with didecyldimethyl ammonium bromide (DDAB) yielding Ti3 C2 Tx -DDAB, is demonstrated. Such functionalization modulates the properties of Ti3 C2 Tx , as evidenced by a 0.47 eV decrease of the work function. It is also shown that DDAB is a powerful n-dopant capable of enhancing electron mobility in conjugated polymers and 2D materials. When Ti3 C2 Tx -DDAB is blended with poly(diketopyrrolopyrrole-co-selenophene) [(PDPP-Se)], a simultaneous increase by 170% and 152% of the hole and electron field-effect mobilities, respectively, is observed, compared to the neat conjugated polymer, with values reaching 2.0 cm2 V-1 s-1 . By exploiting the balanced ambipolar transport of the Ti3 C2 Tx -DDAB/PDPP-Se hybrid, complementary metal-oxide-semiconductor (CMOS) logic gates are fabricated that display well-centered trip points and good noise margin (64.6% for inverter). The results demonstrate that intercalant engineering represents an efficient strategy to tune the electronic properties of Ti3 C2 Tx yielding functionalized MXenes for polymer transistors with unprecedented performances and functions.
More Related Videos
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
10:40A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Field Effect Transistor
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Ziegler–Natta Chain-Growth Polymerization: Overview