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Tightly-bound trion and bandgap engineering viaγ-ray irradiation in the monolayer transition metal dichalcogenide
Xiongli Wu1, Xuejun Zheng1, Guangbiao Zhang2
1School of Mechanical Engineering, Engineering Research Center of Complex Tracks Processing Technology and Equipment of MOE, Key Laboratory of Welding Robot and Application Technology of Hunan Province, Xiangtan, 411105, People's Republic of China.
Abstract:
Afterγ-ray irradiation treatment, a monolayer tungsten diselenide could be transitioned into an n-doped semiconductor due to the anion vacancies created by the radiation. Transmission electron microscope studies showed clear chemical modulation with atomically sharp interface. Change in the lattice vibrational modes induced by passivation of oxygen is captured by Raman spectroscopy. The frequency shifts in both in-plane and out-of-plane modes are dependent linearly on the oxidation content. We observe a negative trion, which is a neutral exciton bound with an electron, in the photoluminescence spectra. The binding energy of this trion is estimated to be ∼90 meV, making it a tightly bound exciton. The first-principles calculation suggests that an increase in the anion vacancy population is generally accompanied by a transition from a direct gap material to an indirect one. This opens up a new venue to engineer the electronic properties of transition metal dichalcogenides by using irradiation.
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