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Irreversible Resistive State Switching in Devices with a Homoleptic Cobalt(II) Complex Active Layer
Biswajit K Barman1, Manas Khatua1, Bappaditya Goswami1
1Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India.
Chemistry, an Asian Journal
|April 19, 2021
Summary
Researchers developed a novel write once-read many (WORM) resistive memory device using a Cobalt(II) complex. This molecular semiconductor offers a high on/off ratio and stable data storage for advanced electronics.
Area of Science:
- Molecular electronics
- Materials science
- Solid-state physics
Background:
- Bi-stable electronic transport in molecules is crucial for resistive data storage devices.
- Transition metal complexes (TMCs) offer tunable redox behavior for multiple bulk transport states.
Purpose of the Study:
- To demonstrate a write once-read many (WORM) resistive memory device using a homoleptic Cobalt(II) complex.
- To investigate the potential of TMCs as active materials in molecular semiconductor devices.
Main Methods:
- Preparation and characterization of a homoleptic Cobalt(II) complex.
- Fabrication and electrical characterization of the resistive memory device.
- Mechanistic investigations of the memory effect.
Main Results:
- Demonstrated a WORM device with a Cobalt(II) complex exhibiting a large on/off current ratio.
- Achieved low operating voltage (<2.7 V) and a high device success ratio (>83%).
- Confirmed data retention stability exceeding 35,000 seconds.
Conclusions:
- The Cobalt(II) complex enables stable, solution-processable WORM memory devices.
- These devices are suitable for large-scale printable electronics.
- The study highlights TMCs as promising materials for molecular semiconductor applications.
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