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Updated: Nov 8, 2025

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Interfacial Electronic Properties and Tunable Contact Types in Graphene/Janus MoGeSiN4 Heterostructures
Nguyen T T Binh1,2, Cuong Q Nguyen1,3, Tuan V Vu4,5
1Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam.
Abstract:
Two-dimensional MoSi2N4 is an emerging class of 2D MA2N4 family, which has recently been synthesized in experiment. Herein, we construct ultrathin van der Waals heterostructures between graphene and a new 2D Janus MoGeSiN4 material and investigate their interfacial electronic properties and tunable Schottky barriers and contact types using first-principles calculations. The GR/MoGeSiN4 vdWHs are expected to be energetically favorable and stable. The high carrier mobility in graphene/MoGeSiN4 vdWHs makes them suitable for high-speed nanoelectronic devices. Furthermore, depending on the stacking patterns, either an n-type or a p-type Schottky contact is formed at the GR/MoGeSiN4 interface. The strain engineering and electric field can lead to the transformation from an n-type to a p-type Schottky contact or from Schottky to Ohmic contact in graphene/MoGeSiN4 heterostructure. These findings provide useful guidance for designing controllable Schottky nanodevices based on graphene/MoGeSiN4 heterostructures with high-performance.
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