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Observation of void formation patterns in SnAg films undergoing electromigration and simulation using random walk

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Electromigration (EM) in Sn-Ag thin films is crucial for electronics. A novel random walk simulation accurately predicts void formation, though film imperfections cause deviations.

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Area of Science:

  • Materials Science
  • Physics
  • Electrical Engineering

Background:

  • Electromigration (EM) is a significant reliability concern in miniaturized electronic devices.
  • Existing EM models primarily focus on Sn-Ag solders within solder joint structures, leaving thin film behavior less explored.
  • Understanding EM in thin films is critical for advancing microelectronic reliability.

Purpose of the Study:

  • To evaluate the predictive capability of existing EM models for void nucleation and evolution in Sn-Ag thin films.
  • To introduce and validate a novel random walk (RW) method for simulating coupled current, thermal, and atomic migration phenomena.
  • To investigate the impact of film imperfections on EM behavior.

Main Methods:

  • Experimental testing of a Sn-3.5Ag (wt.%) thin metallic film under a current density of 7.77 × 10⁴ A/cm² at 15°C.
  • Development and application of a computer simulation using an original random walk (RW) method.
  • Coupled simulation of current distribution, thermal distribution, and atomic migration, accounting for void formation.

Main Results:

  • The RW method demonstrated successful application in predicting void nucleation and evolution due to atomic migration.
  • Simulations showed good agreement with experimental results, validating the RW approach for EM studies.
  • Deviations between simulation and experimental results were observed, attributed to imperfections within the thin film.

Conclusions:

  • The random walk method is a viable and effective tool for modeling electromigration phenomena in metallic thin films.
  • The study highlights the importance of considering material imperfections for accurate EM prediction.
  • Further research can refine RW models to better incorporate the effects of microstructural defects on electromigration.