Related Experiment Video
Updated: Jun 26, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Low-energy room-temperature optical switching in mixed-dimensionality nanoscale perovskite heterojunctions
Ji Hao1, Young-Hoon Kim1, Severin N Habisreutinger1
1National Renewable Energy Laboratory, Golden, CO 80401, USA.
Abstract:
Long-lived photon-stimulated conductance changes in solid-state materials can enable optical memory and brain-inspired neuromorphic information processing. It remains challenging to realize optical switching with low-energy consumption, and new mechanisms and design principles giving rise to persistent photoconductivity (PPC) can help overcome an important technological hurdle. Here, we demonstrate versatile heterojunctions between metal-halide perovskite nanocrystals and semiconducting single-walled carbon nanotubes that enable room-temperature, long-lived (thousands of seconds), writable, and erasable PPC. Optical switching and basic neuromorphic functions can be stimulated at low operating voltages with femto- to pico-joule energies per spiking event, and detailed analysis demonstrates that PPC in this nanoscale interface arises from field-assisted control of ion migration within the nanocrystal array. Contactless optical measurements also suggest these systems as potential candidates for photonic synapses that are stimulated and read in the optical domain. The tunability of PPC shown here holds promise for neuromorphic computing and other technologies that use optical memory.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

