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Updated: Nov 7, 2025
Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes
Published on: August 20, 2007
One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature
Ho-Won Yoon1, Seung-Min Shin1, Seong-Yong Kwon1
1Department of Applied Physics, Korea University, 2511 Sejong-ro, Sejong 30019, Korea.
Abstract:
This paper presents the dry etching characteristics of indium tin oxide (ITO)/Ag/ITO multilayered thin film, used as a pixel electrode in a high-resolution active-matrix organic light-emitting diode (AMOLED) device. Dry etching was performed using a combination of H2 and HCl gases in a reactive ion etching system with a remote electron cyclotron resonance (ECR) plasma source, in order to achieve high electron temperature. The effect of the gas ratio (H2/HCl) was closely observed, in order to achieve an optimal etch profile and an effective etch process, while other parameters-such as the radio frequency (RF) power, ECR power, chamber pressure, and temperature-were fixed. The optimized process, with an appropriate gas ratio, constitutes a one-step serial dry etch solution for ITO and Ag multilayered thin films.
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