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A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Hujun Jia1, Mengyu Dong1, Xiaowei Wang1

  • 1School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|April 30, 2021
PubMed

Keywords:
Metal-Semiconductor Field Effect Transistor (MESFET)SiCheavily doped regionpower added efficiency (PAE)

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