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Interfacial Dzyaloshinskii-Moriya interaction in the epitaxial W/Co/Pt multilayers
Sukanta Kumar Jena1, Rajibul Islam2, Ewelina Milińska1
1Institute of Physics Polish Academy of Sciences, aleja Lotników 32/46, PL-02668 Warsaw, Poland. esieczko@ifpan.edu.pl wawro@ifpan.edu.pl.
Nanoscale
|April 30, 2021
Summary
The Dzyaloshinskii-Moriya interaction (DMI) in W/Co/Pt films was enhanced by molecular beam epitaxy. This study reveals a high DMI strength of 2.64 mJ m-2, crucial for novel magnetic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- The Dzyaloshinskii-Moriya interaction (DMI) in asymmetric ferromagnetic films drives non-collinear spin structures and topologically nontrivial magnetization.
- Understanding DMI is key for developing advanced magnetic memory and logic devices.
Purpose of the Study:
- To investigate the relationship between crystalline structure and DMI strength in W/Co/Pt multilayers.
- To determine the optimal fabrication conditions for maximizing DMI in these systems.
- To correlate experimental findings with theoretical calculations.
Main Methods:
- Fabrication of W/Co/Pt multilayers using molecular beam epitaxy (MBE).
- Characterization of crystalline structure and magnetic properties.
- Experimental determination of DMI strength (D coefficient) from magnetic domain alignment.
- Micromagnetic modeling and density functional theory (DFT) calculations.
Main Results:
- MBE enables higher crystalline quality W/Co/Pt films compared to sputtering.
- A high DMI strength (D coefficient) exceeding 2 mJ m-2 was measured.
- The highest DMI strength (Deff = 2.64 mJ m-2) and surface DMI parameter (DS = 1.83 pJ m-1) were achieved at 10 repetitions.
- Experimental results show excellent agreement with micromagnetic and DFT calculations.
- High DMI originates from interfacial Co atomic layers.
Conclusions:
- Molecular beam epitaxy is a superior method for fabricating high-quality W/Co/Pt films with enhanced DMI.
- The study establishes a clear correlation between crystalline structure, layer repetition, and DMI strength.
- The findings provide a pathway for designing materials with tailored DMI for spintronic applications.
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