Surface Decoration of Cetyltrimethyl Ammonium Bromide on SiC Particles and Its Effects on the Co-Deposition Process

Cetyltrimethyl ammonium bromide (CTAB) is used to decorate the SiC particle surface. The mechanism of the decoration process has been studied by simulation and experimental approaches. Molecular dynamics (MD) simulation finds a bilayer adsorbed structure of CTAB on the SiC particles, which is then verified by Fourier-transform infrared and thermal gravimetric analysis measurements. The MD simulation also finds that the decorative effects of CTAB on the SiC particle surface are related to the surface charge condition of the SiC particles and the concentration of CTAB. The measured zeta potential of the SiC particles shows dependence on the pH condition and the concentration of CTAB. The decorated SiC particles are used to produce composition by the co-deposition technology. With the help of CTAB, SiC particles are successfully incorporated in the deposited layer, where the content of SiC particles is dependent on the concentration of CTAB and the pH of the bath.