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Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Planar Multilayered 2D GeAs Schottky Photodiode for High-Performance Visible-Near-Infrared Photodetection.

Ghada Dushaq¹, Mahmoud Rasras¹

¹Department of Electrical and Computer Engineering, New York University Abu Dhabi, 129188 Abu Dhabi, United Arab Emirates.

ACS Applied Materials & Interfaces

|May 3, 2021

Summary

Novel two-dimensional (2D) Germanium Arsenide (GeAs) photodetectors offer broadband detection from UV to near-infrared. These devices show high responsivity and low capacitance, promising for advanced optoelectronics.

Keywords:

2D GeAs NIR photodetection Schottky barrier optoelectronics photodiodes

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) group IV-V semiconductors, such as Germanium Arsenide (GeAs), are emerging materials for optoelectronics.
These materials possess tunable band gaps, thermodynamic stability, and in-plane anisotropy, but their optoelectronic properties are underexplored.
Broadband photodetectors are crucial for various applications, including optical communication and sensing.

Purpose of the Study:

To demonstrate a broadband metal-semiconductor-metal (MSM) Schottky photodiode utilizing multilayered 2D GeAs.
To investigate the optoelectronic performance of 2D GeAs for photodetection applications.
To explore the potential of 2D GeAs in advanced optoelectronic devices.

Main Methods:

Fabrication of a back-to-back MSM Schottky photodiode with asymmetric contact geometries using multilayered 2D GeAs.
Characterization of the photodetector's electrical and spectral response properties.
Measurement of Schottky barrier height (SBH), dark current, responsivity, and detector capacitance.

Main Results:

The GeAs photodetector exhibited a broadband spectral response from ultraviolet (UV) to near-infrared (NIR) wavelengths.
High responsivity was achieved: 905 A/W at 660 nm (visible) and 98 A/W at 1064 nm (NIR) under low voltage operation (<1 V).
The device demonstrated a low dark current (1.8 nA), low detector capacitance (<1.2 pF), and stable, reproducible performance.

Conclusions:

The developed 2D GeAs MSM photodiode shows excellent broadband photodetection capabilities.
The material's properties, including high responsivity, low dark current, and low capacitance, make it a promising candidate for future optoelectronic applications.
This study highlights the potential of 2D GeAs for advanced UV-vis-NIR photodetectors.