Related Experiment Video
Updated: Nov 7, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
A method of using Si L-edge for O/Si and N/Si quantitative ratio analysis by electron energy loss spectroscopy (EELS)
Yun-Yu Wang1, Sook Fun Chan1, Qiang Jin1
1Micron Technology Inc., 8000 S. Federal Way, Boise, ID, 83716, USA.
Abstract:
In EELS core loss excitation, inverse jump ratio is defined as a ratio between intensity of a pre-core-loss-edge and a signal of the core loss excitation after background subtraction. A linear relationship between inverse jump ratio of Si L-edge and O/Si and N/Si intensity ratio is found for electron energy loss spectroscopy (EELS) analysis. This relationship is used to analyze O/Si and N/Si atomic ratio to quantify the elemental distribution in SiON films and the result is compared with XPS analysis on the same SiON films. The method is applied to blanket wafer elemental analysis and can be used for flash memory structure (3D NAND) to obtain atomic ratios of N/Si and O/Si for tunnel oxide at sub-nanometer scale.
More Related Videos
07:103D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry
Published on: April 29, 2020
14:11Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
Published on: March 29, 2016
Related Concept Videos
Atomic Emission Spectroscopy: Lab
Atomic Emission Spectroscopy: Overview
Electrospray Ionization (ESI) Mass Spectrometry
ESI utilizes electrical energy to transfer ions from the liquid phase of the sample into the...