Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K
MOS Capacitor01:25

MOS Capacitor

1.2K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.2K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

616
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
616

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

A DMAHDM-herbal hybrid gargle for orthodontic-associated complications via oral microbiota regulation, inflammation inhibition, and enamel protection.

Materials today. Bio·2026
Same author

Electron-phonon coupling and symmetry breaking in superconducting oxide interfaces near ferroelectric quantum criticality.

Nature materials·2026
Same author

Simultaneous nanoscale imaging of local conductivity and chemical potential in a quantum Hall isospin ferromagnet.

Nature communications·2026
Same author

KPNA2 Drives Immunosuppression in Ovarian Cancer via CCL2/CCR2-Dependent MDSC Recruitment.

Cancer science·2026
Same author

Direction-resolved nanoscale optical imaging with near-nanometer resolution by emerging infrared torsional force microscopy.

Nature communications·2026
Same author

The 2023 FIGO Stage IA3: shifting the SEOC paradigm from pathogenic debate to clinical precision.

Journal of gynecologic oncology·2026
Same journal

Halide-site-substituting spacer creates quasi-two-dimensional perovskites for vapour-deposited light-emitting diodes.

Nature nanotechnology·2026
Same journal

Nanoscale amorphization of poly(triarylamine) for efficient and stable inverted perovskite photovoltaics.

Nature nanotechnology·2026
Same journal

Bridging nanotechnology and mechanobiology.

Nature nanotechnology·2026
Same journal

Coherent 2D/3D van der Waals epitaxy enables single-crystal perovskite heterostructures.

Nature nanotechnology·2026
Same journal

Coherent 2D-3D van der Waals perovskite epitaxial heterostructures.

Nature nanotechnology·2026
Same journal

Ultrafast, reconfigurable all-optical beam steering and spatial light modulation.

Nature nanotechnology·2026
See all related articles

Related Experiment Video

Updated: Nov 7, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.4K

Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices.

Liangmei Wu1,2,3, Aiwei Wang1,2,3, Jinan Shi2,3

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.

Nature Nanotechnology
|May 4, 2021
PubMed
Summary
This summary is machine-generated.

Researchers developed new non-volatile memory devices using van der Waals heterostructures. These advanced floating-gate memory devices achieve nanosecond programming speeds and high extinction ratios for next-generation electronics.

More Related Videos

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.2K

Related Experiment Videos

Last Updated: Nov 7, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.4K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.2K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Non-volatile memory is crucial for modern electronics, offering high capacity and reliability.
  • Current non-volatile memory suffers from low extinction ratios and slow write speeds (microseconds/milliseconds).

Purpose of the Study:

  • To develop high-performance non-volatile memory devices with improved speed and extinction ratio.
  • To explore the potential of van der Waals heterostructures for advanced memory applications.

Main Methods:

  • Fabrication of floating-gate memory devices using van der Waals heterostructures.
  • Characterization of device performance, focusing on programming/erasing speeds and extinction ratio.

Main Results:

  • Achieved ultrahigh-speed programming/erasing operations in the nanosecond range.
  • Demonstrated an exceptional extinction ratio of up to 1010.
  • Utilized atomically sharp interfaces within the van der Waals heterostructures.

Conclusions:

  • The developed van der Waals heterostructure memory devices overcome limitations of current non-volatile technologies.
  • The enhanced performance enables multi-bit storage and opens new avenues in nanoelectronics.
  • Provides fabrication guidelines for scaling up these advanced memory devices.