Enhanced NO₂ Sensing Performance of Graphene with Thermally Induced Defects

This paper demonstrates the enhanced NO₂ sensing performance of graphene with defects generated by rapid thermal annealing (RTA). A high temperature of RTA (300-700 °C) was applied to graphene under an argon atmosphere to form defects on sp² carbon lattices. The density of defects proportionally increased with increasing the RTA temperature. Raman scattering results confirmed significant changes in sp² bonding. After 700 °C RTA, I_D/I_G, I_2D/I_G, and FWHM (full width at half maximum)(G) values, which are used to indirectly investigate carbon-carbon bonds' chemical and physical properties, were markedly changed compared to the pristine graphene. Further evidence of the thermally-induced defects on graphene was found via electrical resistance measurements. The electrical resistance of the RTA-treated graphene linearly increased with increasing RTA temperature. Meanwhile, the NO₂ response of graphene sensors increased from 0 to 500 °C and reached maximum (R = ~24%) at 500 °C. Then, the response rather decreased at 700 °C (R = ~14%). The results imply that rich defects formed at above a critical temperature (~500 °C) may damage electrical paths of sp² chains and thus deteriorate NO₂ response. Compared to the existing functionalization process, the RTA treatment is very facile and allows precise control of the NO₂ sensing characteristics, contributing to manufacturing commercial low-cost, high-performance, integrated sensors.