Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate...

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistors (MOSFETs) are vital for advanced power conversion.
• Developing reliable GaN-on-Si MOSFETs on foreign substrates presents significant challenges.

Purpose of the Study:

• To provide an overview of challenges in developing reliable vertical GaN-on-Si trench MOSFETs.
• To discuss strategies for identifying and mitigating key reliability issues.
• To highlight advancements in GaN-on-Si MOSFET technology for power applications.

Main Methods:

• Analysis of leakage and doping considerations for high breakdown voltage.
• Investigation of gate design techniques, including dielectric composition and trench structure optimization.
• Application of pulsed techniques and light-assisted de-trapping for analyzing trapping effects and dynamic performance.

Main Results:

• Strategies for optimizing vertical GaN-on-Si stacks to achieve high breakdown voltage.
• Effective gate design variations to enhance breakdown performance.
• Methods for characterizing and comparing device trapping effects to assess dynamic performance.

Conclusions:

• Addressing leakage, doping, gate design, and trapping effects is essential for reliable vertical GaN-on-Si trench MOSFETs.
• Optimized device structures and characterization techniques are key to improving GaN-based power transistor performance.
• This research contributes to the advancement of efficient power conversion technologies using GaN-on-Si MOSFETs.