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Updated: Nov 6, 2025
Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Negative-tone molecular glass photoresist for high-resolution electron beam lithography
Yafei Wang1, Long Chen1, Jiating Yu1
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
Abstract:
A low molecular weight organic compound containing bis-phenol A backbone (BPA-6OH) is reported as a negative-tone photoresist. This material has a high glass transition temperature and excellent thermal stability. A good contrast, well-resolved line pattern around 73.4 nm and sensitivity of 52 µC cm-2 can be received for negative-tone molecular glass photoresist upon exposure in electron beam lithography system. It indicates that the negative-tone molecular glass photoresist is one of the promising candidates for use in electron beam lithography.
