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Updated: Nov 6, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Thickness-modulated lateral MoS2 diodes with sub-terahertz cutoff frequency
Abdelrahman M Askar1, Mohamed Saeed2, Ahmed Hamed2
1School of Engineering Science, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada. aaskar@sfu.ca.
Abstract:
Thickness-modulated lateral MoS2 diodes with an extracted benchmark cutoff frequency (fc) of up to 126 GHz are implemented and fully characterised. Fabricated diodes demonstrate an on-off current ratio of more than 600 and a short circuit current responsivity at zero-bias of 7 A/W. The excellent performance achieved in our device is attributed to reduced contact resistance from using In/Au contacts and low junction capacitance due to the lateral device structure. In addition, the use of multilayer MoS2 crystals enabled relatively high current flow. Small- and large-signal models are extracted from DC and RF characterisation of the fabricated diode prototype. Extracted compact models are compared to the measured DC and S-parameters of the diode, demonstrating excellent matching between models and measurements. The presented diode is suitable for switching circuits and high frequency applications.
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