Thickness-modulated lateral MoS₂ diodes with sub-terahertz cutoff frequency.

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Molybdenum disulfide (MoS2) is a promising 2D material for electronic devices.
• Developing high-frequency diodes is crucial for modern telecommunications and computing.

Purpose of the Study:

• To implement and characterize thickness-modulated lateral MoS2 diodes.
• To achieve benchmark cutoff frequencies for high-speed electronic applications.

Main Methods:

• Fabrication of lateral MoS2 diodes with controlled thickness.
• Utilized Indium/Gold (In/Au) contacts to reduce resistance.
• Performed DC and Radio Frequency (RF) characterization for performance analysis.

Main Results:

• Achieved a benchmark cutoff frequency (fc) of up to 126 GHz.
• Demonstrated an on-off current ratio exceeding 600.
• Obtained a zero-bias short-circuit current responsivity of 7 A/W.
• Validated small- and large-signal models against experimental data.

Conclusions:

• The lateral MoS2 diodes exhibit excellent performance due to reduced contact resistance and low junction capacitance.
• Multilayer MoS2 crystals facilitate high current flow.
• The developed diodes are suitable for switching circuits and high-frequency applications.