Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

561
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
561
Biasing of FET01:22

Biasing of FET

424
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
424
MOSFET Amplifiers01:17

MOSFET Amplifiers

271
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
271
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

405
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
405
Field Effect Transistor01:29

Field Effect Transistor

756
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
756
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

614
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
614

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Intrinsically chiral exciton polaritons in an atomically-thin semiconductor.

Nature communications·2026
Same author

Ultrafast transition from coherent to incoherent polariton nonlinearities in a hybrid 1L-WS<sub>2</sub>/plasmon structure.

Nature nanotechnology·2026
Same author

A foundation model for atomistic materials chemistry.

The Journal of chemical physics·2025
Same author

An arbuscular mycorrhiza from the 407-million-year-old Windyfield Chert identified through advanced fluorescence and Raman imaging.

The New phytologist·2025
Same author

Roadmap for Photonics with 2D Materials.

ACS photonics·2025
Same author

Enhanced Piezoelectricity in Sustainable-By-Design Chitosan Nanocomposite Soft Thin Films for Green Sensors.

ACS nano·2025

Related Experiment Video

Updated: Nov 5, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.5K

Optoelectronic mixing with high-frequency graphene transistors.

A Montanaro1,2, W Wei3, D De Fazio4

  • 1Thales Research and Technology, Palaiseau, France.

Nature Communications
|May 13, 2021
PubMed
Summary
This summary is machine-generated.

Graphene field-effect transistors (GFETs) achieve high-speed optoelectronic mixing up to 67 GHz. This breakthrough enables advanced applications in telecommunications and radio/light detection and ranging (RADAR/LIDARs).

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.7K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

10.1K

Related Experiment Videos

Last Updated: Nov 5, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.5K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.7K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

10.1K

Area of Science:

  • Optoelectronics
  • Materials Science
  • Electrical Engineering

Background:

  • Graphene exhibits ideal properties for optoelectronics, including absorption at telecom wavelengths, high-frequency operation, and CMOS-compatibility.
  • Existing optoelectronic devices face limitations in achieving high-speed signal mixing for advanced applications.

Purpose of the Study:

  • To demonstrate high-speed optoelectronic mixing using graphene field-effect transistors (GFETs).
  • To investigate the influence of the single-layer graphene (SLG) Fermi level on photodetection mechanisms and photocurrent.
  • To explore the potential of GFETs for millimeter-wave (mm-wave) applications.

Main Methods:

  • Fabrication and characterization of GFETs capable of high-frequency operation (~20 GHz bandwidth).
  • Mixing of an electrical gate signal with a modulated optical signal on the SLG channel.
  • Analysis of photocurrent generation and sign dependency on the SLG Fermi level (EF).

Main Results:

  • GFETs successfully achieved high-speed optoelectronic mixing.
  • Photocurrent sign reversal observed based on SLG Fermi level: positive at low EF (<130 meV) and negative photobolometric current at high EF (>130 meV).
  • Devices demonstrated operational capability up to at least 67 GHz.

Conclusions:

  • GFETs are effective for high-speed optoelectronic mixing, offering tunable photodetection mechanisms.
  • The demonstrated performance paves the way for GFETs in mm-wave applications.
  • Potential applications include advanced telecommunications and radio/light detection and ranging (RADAR/LIDARs).