Active control of terahertz waves based on p-Si hybrid PIT metasurface device under avalanche breakdown

Active control of terahertz waves is a critical application for terahertz devices. Silicon is widely used in large-scale integrated circuit and optoelectronic devices, and also shows great potential in the terahertz field. In this paper, a p-Si hybrid metasurface device is proposed and its terahertz characteristics under avalanche breakdown effect is investigated. In the study, a plasmon-induced transparency (PIT) effect caused by the near-field coupling of the bright mode and the dark mode is observed in the transmission spectrum. Due to avalanche breakdown effect, the resonance of the PIT metamaterial disappears as the current increased. Carriers existed in the interface between the metasurface and substrate result to a dipole resonance suppression. When the current continues increasing, the maximal modulation depth can reach up to 99.9%, caused by the avalanche effect of p-Si. Experimental results demonstrate that the avalanche breakdown p-Si can achieve a performance modulation depth, bringing much more possibilities for terahertz devices.