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Spectral and Angle-Resolved Magneto-Optical Characterization of Photonic Nanostructures

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Published on: November 21, 2019

Terahertz detection based on nonlinear Hall effect without magnetic field.

Yang Zhang¹, Liang Fu²

¹Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139.

Proceedings of the National Academy of Sciences of the United States of America

|May 18, 2021

Summary

We developed a new photodetector using the nonlinear Hall effect in quantum materials. This device efficiently detects terahertz and infrared light without external bias, offering fast response and high responsivity.

Keywords:

Berry curvature infrared nonlinear Hall effect terahertz topological materials

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Area of Science:

Quantum Materials Science
Optoelectronics
Condensed Matter Physics

Background:

Broadband photodetection is crucial for terahertz (THz) and infrared (IR) applications.
Existing photodetectors often require external bias or have limitations in speed and sensitivity.

Purpose of the Study:

To propose a novel method for broadband long-wavelength photodetection.
To utilize the nonlinear Hall effect in noncentrosymmetric quantum materials for efficient light detection.

Main Methods:

Employing the nonlinear Hall effect to rectify incident THz or IR electric fields into a direct current.
Operating the photodetector at zero external magnetic field and zero external bias.
Evaluating intrinsic current responsivity from first-principles electronic structure calculations.

Main Results:

Demonstrated a photodetector operating without a diode, external bias, or threshold voltage.
Achieved fast response speed and zero threshold voltage.
Identified Weyl semimetal NbP and ferroelectric semiconductor GeTe as promising materials for high-responsivity photodetection.

Conclusions:

The nonlinear Hall effect offers a promising route for efficient broadband photodetection.
Material properties, specifically Berry curvature, dictate intrinsic current responsivity, independent of frequency or scattering.
NbP and GeTe are identified as suitable quantum materials for bias-free THz/IR photodetectors.