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Efficient and Stable Perovskite Solar Cells Using Bathocuproine Bilateral-Modified Perovskite Layers
Renjie Chen1, Biyu Long1, Song Wang1
1Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, P. R. China.
Abstract:
Surface modification engineering is an effective method to improve the crystallinity and passivate the perovskite interface and grain boundary, which can improve the power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). The typical interface modification method is usually introduced at the interface of the perovskite/hole transport layer (HTL) or perovskite/electron transport layer (ETL) through coordination of the groups in the material with the perovskite. In this work, the n-type semiconductor bathocuproine (BCP) including the pyridine nitrogen bond was modified at the interfaces of perovskite/HTL or perovskite/ETL to improve perovskite crystallinity and interface contact properties. The better crystallinity and superior interface contact properties are obtained using BCP unilateral modification, which obviously increases the PCEs of PSCs. The BCP bilateral modification at both perovskite/ETL and perovskite/HTL interfaces can further improve the crystallinity with fewer defects and superior contact properties, which show the largest Voc (1.14 V) and fill factors (FF 77.1%) compared to PSCs with BCP unilateral modification. PSCs with BCP bilateral modification obtained 20.6% PCEs, which is greatly higher than that (17.5%) of the original PSCs. The stability of PSCs with BCP bilateral modification can be greatly improved due to the better crystal quality and hydrophobic property of the interfaces. The results demonstrated that the n-type BCP material can efficiently modify both perovskite/HTL and perovskite/ETL interfaces beyond its semiconductor type, which can greatly improve the PCEs and stability of PSCs because BCP modification can passivate interfaces, improve interface contact and hydrophobic properties, promote crystallinity of the perovskite layer with fewer defects, and block carrier recombination at both interfaces.
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