Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.1K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K
Torque On A Current Loop In A Magnetic Field01:13

Torque On A Current Loop In A Magnetic Field

5.1K
The most common application of magnetic force on current-carrying wires is in electric motors. These consist of loops of wire, which are placed between the magnets with a magnetic field. When current flows through the loops, the magnetic field applies torque, which causes the shaft to rotate, thus converting electrical energy to mechanical energy.
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
5.1K
Characteristics of MOSFET01:17

Characteristics of MOSFET

603
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
603
MOSFET01:16

MOSFET

736
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
736
Magnetic Vector Potential01:15

Magnetic Vector Potential

1.2K
In electrostatics, the electric field can be written as the negative gradient of the potential. In magnetostatics, the zero divergence of the magnetic field ensures that the magnetic field can be expressed as the curl of a vector potential. This potential is known as the magnetic vector potential.
Consider an ideal solenoid with n turns per unit length and radius R. If I is the current through the solenoid, the magnetic field inside the solenoid is expressed as the product of vacuum...
1.2K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

557
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
557

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Unconventional Phase Shift in Spin Hall Magnetoresistance of Antiferromagnetic Insulators.

ACS applied materials & interfaces·2026
Same author

Hypoxia-induced circSPECC1 drives temozolomide resistance in glioblastoma via IGF2BP2-mediated PGK1 mRNA stabilization.

Cell death & disease·2026
Same author

Self-Powered Smart Textiles for Accelerated Wound Healing through Band Alignment in Piezoelectric Heterojunctions.

ACS nano·2026
Same author

Methylation-regulated miR-374a-5p and miR-374b-5p suppress glycolysis and malignant progression of head and neck squamous cell carcinoma by targeting DEPDC1.

Frontiers in oncology·2026
Same author

Giant spin-orbit magnetic state readout enhanced by a magnetic tunnel junction.

Nature communications·2026
Same author

A pH-responsive layered double hydroxide nanoradiosensitizer for bone metastasis tumor.

Materials today. Bio·2026
Same journal

Reassessing the Proposed Creatine-PrP Axis in Endometriosis: Methodological and Mechanistic Considerations.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same journal

IL-7R-Enriched Extracellular Vesicles From the Thymus Drive Colitis via Promoting Neutrophil Extracellular Trap Formation.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same journal

Oral Prebiotic Polysaccharide Hydrogels Sustaining Colon Antibody Release Alleviate Inflammatory Bowel Disease.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same journal

Systematic Phosphorus-Driven Structural and Field Engineering of n-a-Si:H for Flexible n-a-Si:H/Te Near-Infrared Photodetectors.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same journal

Chemically Gradient Ordered Nanodomains Enable Large Tensile Ductility in Gigapascal Lightweight Refractory High-Entropy Alloys.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same journal

Single-Molecule Characterization of Bacterial Factor-Dependent Transcription Activation by Rob.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
See all related articles

Related Experiment Video

Updated: Nov 4, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.1K

Spin-Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing.

Xueying Zhang1,2,3, Wenlong Cai1, Mengxing Wang1

  • 1Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|May 24, 2021
PubMed
Summary
This summary is machine-generated.

This study demonstrates a nanoscale spin-torque memristor with high magnetoresistance and stable memory states, crucial for advanced neuromorphic computing and non-volatile memory applications.

Keywords:
chiral spin vorticesmagnetic tunnel junctionsmemristorsneuromorphic computingspintronics

More Related Videos

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
07:42

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains

Published on: July 20, 2022

3.0K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.1K

Related Experiment Videos

Last Updated: Nov 4, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.1K
Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
07:42

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains

Published on: July 20, 2022

3.0K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.1K

Area of Science:

  • Spintronics
  • Materials Science
  • Neuromorphic Computing

Background:

  • Spin-torque memristors offer potential for fast, low-power neuromorphic computing and memory.
  • Implementing devices with high magnetoresistance, stable domain wall pinning, and current-induced switching remains challenging.

Purpose of the Study:

  • To experimentally demonstrate a nanoscale spin-torque memristor with enhanced performance.
  • To investigate the mechanisms behind stable memristive behavior in a novel device structure.

Main Methods:

  • Fabrication and characterization of a perpendicular-anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer.
  • Utilizing spin-transfer torque for switching and analyzing domain wall pinning effects.
  • Experimental and simulation-based investigation of spin textures and their influence on device behavior.

Main Results:

  • Achieved tunneling magnetoresistance exceeding 200% with stable memristive states.
  • Demonstrated spin-transfer torque switching and strong domain wall pinning.
  • Identified nanoscale vertical chiral spin textures contributing to pinning effects.

Conclusions:

  • The developed spin-torque memristor exhibits promising characteristics for neuromorphic computing and non-volatile memory.
  • The device's performance is attributed to the unique composite free layer structure and resulting spin textures.
  • The memristor shows potential for applications requiring high speed, long endurance, and low power consumption.