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Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced

Yuanyuan Shi¹, Benjamin Groven¹, Jill Serron¹

¹IMEC, Kapeldreef 75, 3001 Leuven, Belgium.

|May 27, 2021

Summary

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This summary is machine-generated.

Controlling sapphire surface uniformity is key for high-quality molybdenum disulfide (MoS2) growth. Optimized sapphire templates improve MoS2 conductivity and reduce variability in nanoelectronic devices.

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Single crystalline two-dimensional transition metal dichalcogenides (MX2) are promising for next-generation nanoelectronics.
C-plane sapphire is an industry-compatible template for MX2 deposition, but its surface variations pose challenges.
The impact of sapphire surface topography on MX2 properties is not well understood.

Purpose of the Study:

To investigate how sapphire surface anomalies affect the epitaxial growth and electrical properties of molybdenum disulfide (MoS2) monolayers.
To determine the role of sapphire terrace uniformity in achieving homogeneous MoS2 conductivity.
To optimize sapphire template preparation for improved MoS2-based nanoelectronic devices.

Main Methods:

Molybdenum disulfide (MoS2) was deposited using metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire with varying terrace dimensions.

Keywords:

device-to-device variability epitaxial growth field-effect transistors metal−organic chemical vapor deposition sapphire template transition metal dichalcogenides uniformity

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Scanning probe microscopy techniques were employed to analyze MoS2 conductivity.

The effect of an off-axis cut angle on sapphire surface uniformity and MoS2 properties was examined.

Main Results:

Inhomogeneous conductivity was observed in MoS2 monolayers grown on sapphire with uncontrolled surface topography.
MoS2 conductivity became more homogeneous with increased sapphire terrace uniformity achieved by using an off-axis cut angle.
Field-effect transistor variability decreased, and median electron mobility increased with optimized sapphire templates.

Conclusions:

Sapphire surface topography and structure are critical factors influencing MoS2 growth and electrical properties.
Controlling sapphire surface uniformity is essential for fabricating high-performance, low-variability MoS2-based nanoelectronic devices.
Optimized sapphire templates pave the way for systematic studies and controlled manufacturing of 2D materials.