A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Hyukjoon Yoo1, I Sak Lee1, Sujin Jung1
1School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
Abstract:
Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.
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