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Updated: Nov 4, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
B Winiarski1, A Gholinia2, K Mingard3
1Department of Materials, University of Manchester, Manchester, M13 9PL, United Kingdom; Thermo Fisher Scientific, 62700 Brno, Czech Republic.
Large electron backscattered diffraction (EBSD) maps can have significant distortions. This study quantifies these errors in 3D EBSD data and proposes correction methods for accurate morphological interpretation.
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