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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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MOSFET: Depletion Mode01:20

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Updated: Nov 4, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Double-Gate MoS2 Field-Effect Transistors with Full-Range Tunable Threshold Voltage for Multifunctional Logic

Jiali Yi1, Xingxia Sun1, Chenguang Zhu1

  • 1Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|May 31, 2021
PubMed
Summary

This study introduces a novel double-gate transistor using 2D semiconductors for reconfigurable devices. It achieves ultralow subthreshold swing and enables dynamic switching between binary and ternary logic for advanced electronics.

Keywords:
MoS 2double-gate FETsinvertersreconfigurable​ circuitsternary logic

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • The demand for multifunctional reconfigurable devices with higher information capacity and smaller size is increasing.
  • Two-dimensional (2D) semiconductors offer potential for reconfigurable functional units due to their ultrathin body and electrostatic control.

Purpose of the Study:

  • To propose and demonstrate a novel double-gate field-effect transistor (FET) architecture for reconfigurable devices.
  • To achieve flexible optimization of subthreshold swing (SS) and threshold voltage (VTH).
  • To explore applications in high-gain inverters and reconfigurable logic circuits.

Main Methods:

  • Proposed a double-gate FET architecture with equal top and bottom gates (TG and BG).
  • Investigated simultaneous TG and BG operation for transistor driving.
  • Utilized one gate for channel doping initialization.
  • Designed and simulated inverter circuits and reconfigurable logic applications.

Main Results:

  • Achieved an ultralow average SS of 65.5 mV dec⁻¹ over a current range exceeding 10⁴ when TG and BG were used simultaneously.
  • Demonstrated a full logic swing inverter circuit with a high noise margin (>90%) by using one gate for doping initialization.
  • Successfully extended the device prototype for reconfigurable logic applications, enabling dynamic switching between binary and ternary logic.

Conclusions:

  • The proposed double-gate FET architecture provides a viable platform for multifunctional reconfigurable devices.
  • The device demonstrates excellent performance metrics, including ultralow SS and high noise margin.
  • This work offers a significant concept and device prototype for future multifunctional logic applications in information technology.