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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Infrared photoconductor based on surface-state absorption in silicon.

Zhao Wang, Haiyi Liu, Ziyu Zhang

    Optics Letters
    |June 1, 2021
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    Summary

    We developed a novel silicon infrared photoconductor using surface-state absorption. This device offers broad-spectrum detection and high sensitivity, paving the way for advanced infrared imaging applications.

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    Area of Science:

    • Optoelectronics
    • Semiconductor Physics
    • Infrared Technology

    Background:

    • Traditional infrared detectors often face limitations in spectral range, sensitivity, or fabrication compatibility.
    • Silicon-based optoelectronics are highly desirable due to their established manufacturing processes and material properties.

    Purpose of the Study:

    • To introduce a normal-incidence infrared photoconductor leveraging silicon's surface-state absorption.
    • To demonstrate its capabilities for infrared imaging and beam profile measurements.
    • To discuss the potential for scaling to multi-pixel camera systems.

    Main Methods:

    • Fabrication of a normal-incidence photoconductor using a CMOS-compatible process.
    • Utilizing surface-state absorption in silicon for infrared detection.
    • Employing lock-in readouts to achieve high sensitivity.

    Main Results:

    • Achieved a broad-spectrum photoresponse in the infrared range.
    • Demonstrated high sensitivity of -46 dBm.
    • Confirmed near transparency to incident light.
    • Successfully applied the device for infrared imaging and beam profile measurements.

    Conclusions:

    • The developed silicon photoconductor offers a promising solution for infrared detection.
    • Its CMOS compatibility and high performance enable practical applications in imaging and metrology.
    • Future development can lead to integrated multi-pixel infrared camera systems.