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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Updated: Nov 3, 2025

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Optical switch with ultra high extinction ratio using electrically controlled metal diffusion.

Lalit Singh, Sulabh Srivastava, Swati Rajput

    Optics Letters
    |June 1, 2021
    PubMed
    Summary

    A novel optical switch utilizes resistive switching for high extinction ratios. This silicon-based nanophotonic device offers a compact, efficient solution for integrated photonic circuits.

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    Area of Science:

    • Photonics and Materials Science
    • Nanotechnology and Integrated Optics

    Background:

    • Optical switching is crucial for high-speed data transmission.
    • Existing silicon photonic devices face limitations in extinction ratio and size.
    • Resistive switching offers a promising alternative for optical control.

    Purpose of the Study:

    • To propose and demonstrate a novel optical switch with an ultra-high extinction ratio.
    • To leverage the resistive switching effect for efficient optical signal control.
    • To engineer nanophotonic waveguides for enhanced mode coupling and switching performance.

    Main Methods:

    • Fabrication of a compact, on-chip silicon-based nanophotonic device.
    • Utilizing lateral coupling between input and output waveguides at 1550 nm.
    • Employing the resistive switching effect, driven by electric field-induced metal ion diffusion.

    Main Results:

    • Achieved an ultra-high optical extinction ratio of 27 dB in a 20 µm long device.
    • Demonstrated a significant reduction in coupling length compared to plasma dispersion methods.
    • Observed an almost 100 times higher extinction ratio due to enhanced waveguide absorption and mode beats.

    Conclusions:

    • The proposed nanophotonic resistive switch offers superior performance for optical switching applications.
    • This compact device is suitable for large-scale integrated photonic circuits.
    • Potential applications include optical switching, modulation, memory, and computation.