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Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device.
Fengzhen Lv1, Tingting Zhong1, Yongfu Qin1
1Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, China.
Nanomaterials (Basel, Switzerland)
|June 2, 2021
Summary
This study introduces lead-free double perovskite Cs2AgBiBr6 memristors that combine light-responsive and memory functions. These devices exhibit stable resistive switching behavior under illumination, showing potential for multifunctional applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Device Engineering
Background:
- Memristors offer advanced memory and neuromorphic computing capabilities.
- Lead-free perovskites are explored for safer, high-performance electronic devices.
- Combining photoresponse with memory functions enables novel device applications.
Purpose of the Study:
- To develop and characterize lead-free double perovskite Cs2AgBiBr6 films for memristor applications.
- To investigate the light-modulated resistive switching behavior of Cs2AgBiBr6-based memristors.
- To understand the underlying mechanism of resistive switching and photoresponse.
Main Methods:
- Low-temperature sol-gel method for preparing Cs2AgBiBr6 films on ITO substrates.
- Fabrication of Pt/Cs2AgBiBr6/ITO memristor devices.
- Electrical characterization including resistive switching measurements under varying light conditions (darkness and 445 nm illumination).
Main Results:
- Dense and uniform Cs2AgBiBr6 films were successfully prepared.
- The Pt/Cs2AgBiBr6/ITO memristor demonstrated obvious bipolar resistive switching.
- A significant light modulation effect was observed, with the R_OFF/R_ON ratio increasing ~100 times under 445 nm light compared to darkness.
- The device exhibited excellent retention (>2400 s) and endurance (>500 cycles) under illumination.
- Resistive switching is attributed to a trap-controlled space-charge-limited current mechanism involving bromine vacancies.
Conclusions:
- Lead-free Cs2AgBiBr6 is a promising material for multifunctional memristors.
- Light modulation significantly enhances the performance and characteristics of these memristors.
- The findings pave the way for developing advanced optoelectronic memory devices.
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